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| NTE5650 thru NTE5653 TRIAC - 100VRM, 2.5A Description: The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a void-free glass passivated chip and are hermetically sealed in TO-5 outline cans. The NTE5650 through NTE5653 are bi-directional triode thyristors and may be switched from off- state to conduction for either polarity of applied voltage with positive or negative gate-trigger current and are designed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (TJ = +90C, Gate Open, Note 1), VDROM NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5652 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5653 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +75C and Conduction Angle of 360), IT(RMS) . . . . . . . . . . . . . . . 3A Peak Surge (Non-Repetitive) On-State Current (One-Cycleat 50Hz or 60Hz), ITSM . . . . . . . . 30A Peak Gate-Trigger Current (3sec, Max.), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate-Power Dissipation (IGT IGTM for 3sec. Max.), PGM . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate-Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W Operating Temperature Range (TC), Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +90C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4C/W Note 1. All values apply in either direction. Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature) Parameter Peak Off-State Current Maximum On-State Voltage DC Holding Current Critical Rate-of-Rise of Off-State Voltage DC Gate-Trigger Current MT2 (+) Gate (+), MT2 (-) Gate (-) MT2 (+) Gate (-), MT2 (-) Gate (+) Symbol IDROM VTM IHO Critical dv/dt IGT Test Conditions TJ = +90C, VDROM = Max Rating, Gate Open, Note 1 TC = +25C, iT = 5A (Peak), Note 1 TC = +25C, Gate Open TC = +90C, vD = VDROM, Gate Open, Note 1 TC = + 25C, vD = 6V, RL = 39 Min - - - - Typ - - - 3 Max Unit 0.75 1.85 5 - mA V mA V/s - - 3 mA Note 1. All values apply in either direction. Electrical Characteristics (Cont'd): (At Maximum Ratings & Specified Case Temperature) Parameter DC Gate Trigger Voltage Gate-Controlled Turn-On Time Fusing Current (For TRIAC Protection) Symbol VGT tgt I2t Test Conditions TC = +25C, vD = 6V, RL = 39 TC = +25C, vD = VDROM, IGT = 80mA, tr = 0.1s, iT = 10A (Peak) T = 1.25 to 10ms Min - - - Typ - 2.2 - Max Unit 2.2 - 3 V s A2s .352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Dia Gate MT1 MT2 45 .031 (.793) TO5 |
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